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HN1B04FE-Y,LF

Non-unpack
Specification
Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R
Mf Part No.
--
Brand
Toshiba
Item Category
Bipolar Transistors - BJT
BatchNumber
1702
MPQ
1
Stock
6908
MOQ
208
Tiered Quantity
US Dollar
208
$0.033
250
$0.0327
500
$0.0323
1000
$0.031
3000
$0.0297
6000
$0.0284
 
Lead Time:6-12 Days
Stock Limited
  • Details
  • Shipping
  • Payment Method
  • Guarantee
Toshiba HN1B04FE-Y,LF is available at Allchips.100% original and new guarantee. If comprehensive data for HN1B04FE-Y,LF to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-563-6
Transistor polarity
NPN, PNP
Configuration
Dual
Collector - Emitter maximum voltage VCEO
50 V, - 50 V
Collector-base voltage VCBO
60 V, - 50 V
Emitter-base voltage VEBO
5 V, - 5 V
Collector - emitter saturation voltage
100 mV, - 100 mV
最大直流电集电极电流
150 mA, - 150 mA
Gain Bandwidth Product fT
80 MHz, 80 MHz
The maximum working temperature
+ 150 C
Series
HN1B04
直流集电极/Base Gain hfe Min
120
直流电流增益 hFE 最大值
400 at 2 mA at 6 V, 400 at - 2 mA at - 6 V
Pd - Power Dissipation
100 mW
Factory packing quantity
4000
Unit weight
3 mg

Shipping Type Ship Fee Lead Time Processing Time
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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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