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HN1B04FU-GR,LF

Non-unpack
Specification
Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R
Mf Part No.
--
Brand
Toshiba
Item Category
Bipolar Transistors - BJT
BatchNumber
1703
MPQ
1
Stock
2377
MOQ
183
Tiered Quantity
US Dollar
183
$0.0847
250
$0.084
500
$0.0833
1000
$0.0589
 
Lead Time:6-12 Days
Stock Limited
  • Details
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  • Payment Method
  • Guarantee
Toshiba HN1B04FU-GR,LF is available at Allchips.100% original and new guarantee. If comprehensive data for HN1B04FU-GR,LF to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-363-6
Transistor polarity
NPN, PNP
Configuration
Dual
Collector - Emitter maximum voltage VCEO
50 V, - 50 V
Collector-base voltage VCBO
60 V, - 50 V
Emitter-base voltage VEBO
5 V, - 5 V
Collector - emitter saturation voltage
100 mV, - 100 mV
最大直流电集电极电流
150 mA, - 150 mA
Gain Bandwidth Product fT
150 MHz, 120 MHz
The maximum working temperature
+ 125 C
Series
HN1B04
直流集电极/Base Gain hfe Min
120
直流电流增益 hFE 最大值
400 at 2 mA at 6 V, 400 at - 2 mA at - 6 V
Pd - Power Dissipation
200 mW
Factory packing quantity
3000
Unit weight
7.500 mg

Shipping Type Ship Fee Lead Time Processing Time
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Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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