Specification
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Mf Part No.
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Brand
Toshiba
Item Category
MOSFET
BatchNumber
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Toshiba
SSM3J353F,LF
is available at Allchips.100% original and new guarantee. If comprehensive data for
SSM3J353F,LF
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk,
alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-346-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 30 V
Id - continuous drain current
- 2 A
Rds On - Drain-Source On-Resistance
125 mOhms
Vgs th - gate-source threshold voltage
- 2.2 V
Vgs - gate-source voltage
20 V
Qg - gate charge
3.4 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Height
1.1 mm
Length
2.9 mm
Pd - Power Dissipation
1.2 W
Series
SSM3cqwtzdbfbycv
Factory packing quantity
3000
Transistor type
1 P-Channel
Typical shutdown delay time
34 ns
Typical turn-on delay time
30 ns
Width
1.5 mm
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