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SSM3K2615R,LF

Specification

Trans MOSFET N-CH Si 60V 2A Automotive 3-Pin SOT-23F T/R

Mf Part No.

Brand

Toshiba

Item Category

MOSFET

BatchNumber

2050

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

SOT-23-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - continuous drain current

2 A

Rds On - Drain-Source On-Resistance

580 mOhms

Vgs th - gate-source threshold voltage

800 mV

Vgs - gate-source voltage

20 V

Qg - gate charge

6 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Enhancement

Fall time

50 ns

Height

0.9 mm

Length

2.9 mm

Pd - Power Dissipation

2 W

Rise Time

25 ns

Series

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Factory packing quantity

3000

Width

1.3 mm

Unit weight

8 mg

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