Specification
Trans MOSFET N-CH Si 60V 106A 3-Pin(2+Tab) DPAK T/R
Mf Part No.
--
Brand
Toshiba
Item Category
MOSFET
BatchNumber
1721
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TK4R4P06PL,RQ
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TK4R4P06PL,RQ
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - continuous drain current
106 A
Rds On - Drain-Source On-Resistance
3.4 mOhms
Vgs th - gate-source threshold voltage
1.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
48.2 nC
The maximum working temperature
+ 175 C
Configuration
Single
Channel mode
Enhancement
Fall time
18 ns
Pd - Power Dissipation
87 W
Rise Time
10 ns
Series
TK4R4P06PL
Factory packing quantity
2500
Transistor type
1 N-Channel
Typical shutdown delay time
55 ns
Typical turn-on delay time
24 ns
Unit weight
200 mg