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SI2333DDS-T1-GE3

Non-unpack
Specification
Trans MOSFET P-CH 12V 5A 3-Pin SOT-23
Mf Part No.
--
Brand
Vishay
Item Category
MOSFET
BatchNumber
1811
  • Details
  • Shipping
  • Payment Method
  • Guarantee
Vishay SI2333DDS-T1-GE3 is available at Allchips.100% original and new guarantee. If comprehensive data for SI2333DDS-T1-GE3 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SOT-23-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 12 V
Id - continuous drain current
- 6 A
Rds On - Drain-Source On-Resistance
0.023 Ohms
Vgs th - gate-source threshold voltage
- 1 V
Vgs - gate-source voltage
8 V
Qg - gate charge
35 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
1 P-Channel
Channel mode
Enhancement
Fall time
20 ns
Forward transconductance - minimum
18 S
Height
1.45 mm
Length
2.9 mm
Pd - Power Dissipation
1.7 W
Rise Time
24 ns
Series
SI2
Factory packing quantity
3000
Transistor type
1 P-Channel
Typical shutdown delay time
45 ns
Typical turn-on delay time
26 ns
Width
1.6 mm
Unit weight
8 mg

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EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
  1. 1. Allchips offer a warranty of 360 days for each component.
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