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SI8481DB-T1-E1
Specification
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Mf Part No.
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Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
--
MPQ
3000
Stock
0
MOQ
3000
Tiered Quantity
US Dollar
1
$4.6449
10
$3.1239
100
$2.106
500
$1.6965
1000
$1.2753
3000
$1.16766
6000
$1.09629
9000
$1.02375
24000
$0.94419
Lead Time:5-7
Days
Stock Limited
- Details
- Shipping
- Payment Method
- Guarantee
Vishay / Siliconix
SI8481DB-T1-E1
is available at Allchips.100% original and new guarantee. If comprehensive data for
SI8481DB-T1-E1
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
MicroFoot-4
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 20 V
Id - continuous drain current
- 9.7 A
Rds On - Drain-Source On-Resistance
0.017 Ohms
Vgs th - gate-source threshold voltage
- 0.9 V
Vgs - gate-source voltage
8 V
Qg - gate charge
81 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
110 ns
Forward transconductance - minimum
22 S
Pd - Power Dissipation
2.8 W
Rise Time
20 ns
Factory packing quantity
3000
Transistor type
1 P-Channel
Typical shutdown delay time
400 ns
Typical turn-on delay time
7 ns
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