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SIHD6N65E-GE3

Non-unpack
Specification
--
Mf Part No.
--
Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
--
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Vishay / Siliconix SIHD6N65E-GE3 is available at Allchips.100% original and new guarantee. If comprehensive data for SIHD6N65E-GE3 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - continuous drain current
7 A
Rds On - Drain-Source On-Resistance
0.6 Ohms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
30 V
Qg - gate charge
24 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
20 ns
Height
2.38 mm
Length
6.73 mm
Pd - Power Dissipation
78 W
Rise Time
12 ns
Series
E
Factory packing quantity
3000
Typical shutdown delay time
30 ns
Typical turn-on delay time
14 ns
Width
6.22 mm
Unit weight
1.438 g

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