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SIHD6N65E-GE3

Specification

Mf Part No.

Brand

Vishay / Siliconix

Item Category

MOSFET

BatchNumber

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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

TO-252-3

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - continuous drain current

7 A

Rds On - Drain-Source On-Resistance

0.6 Ohms

Vgs th - gate-source threshold voltage

4 V

Vgs - gate-source voltage

30 V

Qg - gate charge

24 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Enhancement

Fall time

20 ns

Height

2.38 mm

Length

6.73 mm

Pd - Power Dissipation

78 W

Rise Time

12 ns

Series

Factory packing quantity

3000

Typical shutdown delay time

30 ns

Typical turn-on delay time

14 ns

Width

6.22 mm

Unit weight

1.438 g

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