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SIHH21N65E-T1-GE3
Specification
--
Mf Part No.
--
Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
--
MPQ
3000
Stock
0
MOQ
3000
Tiered Quantity
US Dollar
1
$53.2701
10
$44.1558
100
$36.3168
250
$35.1936
500
$31.6017
1000
$26.6409
3000
$25.272
Lead Time:5-7
Days
If you need it, please contact our customer service
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Vishay / Siliconix
SIHH21N65E-T1-GE3
is available at Allchips.100% original and new guarantee. If comprehensive data for
SIHH21N65E-T1-GE3
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
PowerPAK-8x8-4
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - continuous drain current
20.3 A
Rds On - Drain-Source On-Resistance
0.148 Ohms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
30 V
Qg - gate charge
66 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
44 ns
Height
1 mm
Length
8 mm
Pd - Power Dissipation
156 W
Rise Time
46 ns
Series
E
Factory packing quantity
3000
Typical shutdown delay time
69 ns
Typical turn-on delay time
26 ns
Width
8 mm
Unit weight
50 mg
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