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SIHH21N65E-T1-GE3

Specification

Mf Part No.

Brand

Vishay / Siliconix

Item Category

MOSFET

BatchNumber

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Details
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Specification

RoHS

yes

Technology

Installation style

SMD/SMT

Package / case

PowerPAK-8x8-4

Number of channels

1 Channel

Transistor polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - continuous drain current

20.3 A

Rds On - Drain-Source On-Resistance

0.148 Ohms

Vgs th - gate-source threshold voltage

4 V

Vgs - gate-source voltage

30 V

Qg - gate charge

66 nC

Minimum working temperature

- 55 C

The maximum working temperature

+ 150 C

Configuration

Single

Channel mode

Enhancement

Fall time

44 ns

Height

1 mm

Length

8 mm

Pd - Power Dissipation

156 W

Rise Time

46 ns

Series

Factory packing quantity

3000

Typical shutdown delay time

69 ns

Typical turn-on delay time

26 ns

Width

8 mm

Unit weight

50 mg

	Ship Fee	Lead Time	Processing Time
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TNT	$25.00-$65.00(0.50KG)	2-5 days
EMS	$25.00-$45.00(0.50KG)	4-15 days
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FedEX	$20.00-$40.00(0.50KG)	3-7 days