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SIHH21N65E-T1-GE3

Non-unpack
Specification
--
Mf Part No.
--
Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
--
  • Details
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Vishay / Siliconix SIHH21N65E-T1-GE3 is available at Allchips.100% original and new guarantee. If comprehensive data for SIHH21N65E-T1-GE3 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
PowerPAK-8x8-4
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - continuous drain current
20.3 A
Rds On - Drain-Source On-Resistance
0.148 Ohms
Vgs th - gate-source threshold voltage
4 V
Vgs - gate-source voltage
30 V
Qg - gate charge
66 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 150 C
Configuration
Single
Channel mode
Enhancement
Fall time
44 ns
Height
1 mm
Length
8 mm
Pd - Power Dissipation
156 W
Rise Time
46 ns
Series
E
Factory packing quantity
3000
Typical shutdown delay time
69 ns
Typical turn-on delay time
26 ns
Width
8 mm
Unit weight
50 mg

Shipping Type Ship Fee Lead Time Processing Time
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TNT TNT $25.00-$65.00(0.50KG) 2-5 days
EMS EMS $25.00-$45.00(0.50KG) 4-15 days
Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
  1. 1. Allchips offer a warranty of 360 days for each component.
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