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SQ4946AEY-T1_GE3
Specification
--
Mf Part No.
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Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
--
MPQ
2500
Stock
0
MOQ
2500
Tiered Quantity
US Dollar
1
$10.9629
10
$9.0441
100
$6.9264
500
$5.9553
1000
$4.7034
2500
$4.3875
5000
$4.1652
10000
$4.0131
Lead Time:5-7
Days
Stock Limited
- Details
- Shipping
- Payment Method
- Guarantee
Vishay / Siliconix
SQ4946AEY-T1_GE3
is available at Allchips.100% original and new guarantee. If comprehensive data for
SQ4946AEY-T1_GE3
to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.
Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
SO-8
Number of channels
2 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V, 60 V
Id - continuous drain current
7 A, 7 A
Rds On - Drain-Source On-Resistance
0.033 Ohms, 0.033 Ohms
Vgs th - gate-source threshold voltage
1.5 V, 1.5 V
Vgs - gate-source voltage
20 V, 20 V
Qg - gate charge
18 nC, 18 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Dual
Qualifications
AEC-Q101
Channel mode
Enhancement
Fall time
2.1 ns, 2.1 ns
Forward transconductance - minimum
15 S, 15 S
Height
1.75 mm
Length
4.9 mm
Pd - Power Dissipation
4 W
Rise Time
3.3 ns, 3.3 ns
Series
SQ
Factory packing quantity
2500
Transistor type
2 N-Channel
Typical shutdown delay time
22.4 ns, 22.4 ns
Typical turn-on delay time
7 ns, 7 ns
Width
3.9 mm
Unit weight
506.600 mg
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