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SQD50P06-15L_GE3

Non-unpack
Specification
--
Mf Part No.
--
Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
--
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Vishay / Siliconix SQD50P06-15L_GE3 is available at Allchips.100% original and new guarantee. If comprehensive data for SQD50P06-15L_GE3 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
TO-252-3
Number of channels
1 Channel
Transistor polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
- 60 V
Id - continuous drain current
- 50 A
Rds On - Drain-Source On-Resistance
0.0135 Ohms
Vgs th - gate-source threshold voltage
- 2.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
150 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q101
Channel mode
Enhancement
Fall time
39 ns
Forward transconductance - minimum
50 S
Height
2.38 mm
Length
6.73 mm
Pd - Power Dissipation
136 W
Rise Time
12 ns
Series
SQ
Factory packing quantity
2000
Transistor type
1 P-Channel
Typical shutdown delay time
112 ns
Typical turn-on delay time
15 ns
Width
6.22 mm
Unit weight
1.438 g

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Air, Sea/air and Sea Air, Sea/air and Sea $2.00-$3.00(0.10KG) 7-30 days
FedEX $20.00-$40.00(0.50KG) 3-7 days
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