Specification
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Mf Part No.
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Brand
Vishay / Siliconix
Item Category
MOSFET
BatchNumber
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Vishay / Siliconix
SQS484ENW-T1_GE3
is available at Allchips.100% original and new guarantee. If comprehensive data for
SQS484ENW-T1_GE3
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Specification
RoHS
yes
Technology
Si
Installation style
SMD/SMT
Package / case
PowerPAK-1212-8
Number of channels
1 Channel
Transistor polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - continuous drain current
16 A
Rds On - Drain-Source On-Resistance
0.0065 Ohms
Vgs th - gate-source threshold voltage
1.5 V
Vgs - gate-source voltage
20 V
Qg - gate charge
35 nC
Minimum working temperature
- 55 C
The maximum working temperature
+ 175 C
Configuration
Single
Qualifications
AEC-Q101
Channel mode
Enhancement
Fall time
10 ns
Forward transconductance - minimum
52 S
Pd - Power Dissipation
62.5 W
Rise Time
5 ns
Series
SQ
Factory packing quantity
3000
Transistor type
1 N-Channel
Typical shutdown delay time
25 ns
Typical turn-on delay time
11 ns