IXA60IF1200NA
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 1.8 V |
Continuous collector current at 25 ° C | 88 A |
Gate-emitter leakage current | 500 nA |
Pd - Power Dissipation | 290 W |
Package / case | SOT-227B-4 |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | 20 V |
Minimum working temperature | - 55 C |
Installation style | SMD/SMT |
Series | IXA60IF1200NA |
Factory packing quantity | 10 |
Unit weight | 30 g |
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