IXXN200N60C3H1
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 1.6 V |
Continuous collector current at 25 ° C | 200 A |
Gate-emitter leakage current | +/- 200 nA |
Package / case | SOT-227B-4 |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 55 C |
Installation style | SMD/SMT |
Series | IXXN200N60 |
Factory packing quantity | 10 |
Unit weight | 30 g |
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