IFCM30T65GDXKMA1
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | 2-Phase |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.75 V |
Continuous collector current at 25 ° C | 30 A |
Gate-emitter leakage current | 1 mA |
Pd - Power Dissipation | 60.4 W |
Package / case | MDIP-24 |
The maximum working temperature | + 100 C |
Gate / emitter maximum voltage | - |
Minimum working temperature | - 40 C |
Installation style | Through Hole |
Series | CIPOS Mini |
Factory packing quantity | 280 |
Technology | Si |
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