MAAM-009455-TR1000
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Specification
RoHS | yes |
Transistor type | MESFET |
Technology | GaAs |
Gain | 20.5 dB |
Vds - Drain-Source Breakdown Voltage | 8 V |
Id - continuous drain current | 375 mA |
The maximum working temperature | + 85 C |
Installation style | SMD/SMT |
Package / case | PQFN-20 |
Minimum working temperature | - 40 C |
NF-noise figure | 5.5 dB |
working frequency | 1 GHz |
Range of working temperature | - 40 C to + 85 C |
P1dB - compression point | 26 dBm |
Product | RF JFET |
Factory packing quantity | 1000 |
Types | GaAs MESFET |
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