APT50GR120JD30
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 1.2 kV |
Collector - emitter saturation voltage | 3.5 V |
Continuous collector current at 25 ° C | 84 A |
Gate-emitter leakage current | +/- 250 nA |
Pd - Power Dissipation | 417 W |
Package / case | ISOTOP-4 |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 30 V |
Minimum working temperature | - 55 C |
Installation style | SMD/SMT |
Factory packing quantity | 1 |
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