TN0106N3-G-P003
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-92-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 350 mA |
Rds On - Drain-Source On-Resistance | 4.5 Ohms |
Vgs - gate-source voltage | 2 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 3 ns |
Pd - Power Dissipation | 1 W |
Product | MOSFET Small Signal |
Rise Time | 3 ns |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 6 ns |
Typical turn-on delay time | 2 ns |
Unit weight | 453.600 mg |
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