BFU725F/N1,115
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | NXP |
RoHS | yes |
Transistor type | Bipolar |
Technology | Si |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 40 |
Collector - Emitter maximum voltage VCEO | 2.8 V |
Emitter-base voltage VEBO | 0.55 V |
Continuous collector current | 40 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | NXP Semiconductors |
Collector-base voltage VCBO | 10 V |
DC current gain hFE maximum | 160 at 10 mA at 2 V |
Gain Bandwidth Product fT | 55000 MHz |
Height | 1 mm |
Length | 2.2 mm |
Maximum DC collector current | 0.04 A |
Minimum working temperature | - 65 C |
working frequency | 55 GHz |
Pd - Power Dissipation | 136 mW |
Factory packing quantity | 3000 |
Types | RF Bipolar Small Signal |
Width | 1.35 mm |
Unit weight | 6.670 mg |
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