BFU760F,115
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Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | NXP |
RoHS | yes |
Transistor type | Bipolar |
Technology | SiGe |
DC collector / Base Gain hfe Min | 155 |
Collector - Emitter maximum voltage VCEO | 2.8 V |
Emitter-base voltage VEBO | 1 V |
Continuous collector current | 70 mA |
Installation style | SMD/SMT |
Package / case | SOT-343 |
Trademark | NXP Semiconductors |
working frequency | 45 GHz |
Pd - Power Dissipation | 220 mW |
Factory packing quantity | 3000 |
Types | RF Silicon Germanium |
Unit weight | 6.665 mg |
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