2SA2169-TL-E
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | - 50 V |
Collector-base voltage VCBO | - 50 V |
Emitter-base voltage VEBO | - 6 V |
Collector - emitter saturation voltage | - 290 mV |
Maximum DC collector current | - 13 A |
Gain Bandwidth Product fT | 130 MHz |
The maximum working temperature | + 150 C |
Series | 2SA2169 |
Continuous collector current | - 10 A |
DC collector / Base Gain hfe Min | 200 |
DC current gain hFE maximum | 560 |
Pd - Power Dissipation | 20 W |
Factory packing quantity | 700 |
Unit weight | 1.800 g |
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