2SC5658M3T5G
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-723-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 50 V |
Collector-base voltage VCBO | 50 V |
Emitter-base voltage VEBO | 5 V |
Collector - emitter saturation voltage | 0.4 V |
Maximum DC collector current | 0.1 A |
Gain Bandwidth Product fT | 180 MHz |
The maximum working temperature | + 150 C |
Series | 2SC5658M3 |
Continuous collector current | 0.1 A |
DC collector / Base Gain hfe Min | 120 |
Height | 0.5 mm |
Length | 1.2 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 260 mW |
Factory packing quantity | 8000 |
Width | 0.8 mm |
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