NSV2SC5658M3T5G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-723-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 50 V |
Collector-base voltage VCBO | 5 V |
Emitter-base voltage VEBO | 7 V |
Collector - emitter saturation voltage | 400 mV |
Maximum DC collector current | 150 mA |
Gain Bandwidth Product fT | 180 MHz |
The maximum working temperature | + 150 C |
DC collector / Base Gain hfe Min | 120 |
DC current gain hFE maximum | 560 at 1 mA at 6 VDC |
Pd - Power Dissipation | 260 mW |
Factory packing quantity | 8000 |
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Bipolar (BJT) Transistor NPN 50 V 150 mA 180MHz 260 mW Surface Mount SOT-723
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