2SD1664T100P
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 32 V |
Collector-base voltage VCBO | 40 V |
Emitter-base voltage VEBO | 5 V |
最大直流电集电极电流 | 1 A |
Gain Bandwidth Product fT | 150 MHz |
The maximum working temperature | + 150 C |
Continuous collector current | 1 A |
直流集电极/Base Gain hfe Min | 82 |
直流电流增益 hFE 最大值 | 82 at 100 mA at 3 V |
Height | 1.5 mm |
Length | 4.5 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 2000 mW |
Factory packing quantity | 1000 |
Width | 2.5 mm |
Unit weight | 130.500 mg |
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