2SD1766T100Q
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 32 V |
Collector-base voltage VCBO | 40 V |
Emitter-base voltage VEBO | 5 V |
Maximum DC collector current | 2.5 A |
Gain Bandwidth Product fT | 100 MHz |
The maximum working temperature | + 150 C |
Continuous collector current | 2 A |
DC collector / Base Gain hfe Min | 120 |
DC current gain hFE maximum | 390 |
Height | 1.5 mm |
Length | 4.5 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 10 W |
Factory packing quantity | 1000 |
Width | 2.5 mm |
Unit weight | 130.500 mg |
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