EM6K33T2R
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-563-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 50 V, 50 V |
Id - continuous drain current | 200 mA, 200 mA |
Rds On - Drain-Source On-Resistance | 1.6 Ohms, 1.6 Ohms |
Vgs th - gate-source threshold voltage | 300 mV, 300 mV |
Vgs - gate-source voltage | 8 V, 8 V |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 55 ns, 55 ns |
Pd - Power Dissipation | 150 mW |
Rise Time | 6 ns, 6 ns |
Series | EM6K33 |
Factory packing quantity | 8000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 15 ns, 15 ns |
Typical turn-on delay time | 4 ns, 4 ns |
Unit weight | 3 mg |
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