MJE350
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Specification
RoHS | yes |
Installation style | Through Hole |
Package / case | SOT-32-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 300 V |
Collector-base voltage VCBO | 3 V |
Emitter-base voltage VEBO | 3 V |
Collector - emitter saturation voltage | 0.5 V |
Maximum DC collector current | 0.5 A |
The maximum working temperature | + 150 C |
Series | 500V Transistors |
Continuous collector current | 0.5 A |
DC collector / Base Gain hfe Min | 30 |
DC current gain hFE maximum | 240 |
Height | 10.8 mm (Max) |
Length | 7.8 mm (Max) |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 20.8 W |
Factory packing quantity | 2000 |
Width | 2.7 mm (Max) |
Unit weight | 60 mg |
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