GP2S60B
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Specification
RoHS | yes |
Sensing distance | 0.5 mm |
Collector - Emitter maximum voltage VCEO | 35 V |
Maximum collector current | 20 mA |
Vf - forward voltage | 1.2 V |
Vr - reverse voltage | 6 V |
The maximum working temperature | + 85 C |
Minimum working temperature | - 25 C |
Installation style | SMD/SMT |
Fall time | 20 us |
Height | 1.1 mm |
If - Forward current | 20 mA |
Length | 3.2 mm |
Number of channels | 1 Channel |
Output type | Phototransistor |
Package / case | SMD-4 |
Pd - Power Dissipation | 100 mW |
Rise Time | 20 us |
Sensing method | Reflective |
Factory packing quantity | 2000 |
Wavelength | 950 nm |
Width | 1.7 mm |
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