SQJB80EP-T1_GE3
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PowerPAK-SO-8L-4 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V, 80 V |
Id - continuous drain current | 30 A, 30 A |
Rds On - Drain-Source On-Resistance | 15.5 mOhms, 15.5 mOhms |
Vgs th - gate-source threshold voltage | 1.5 V, 1.5 V |
Vgs - gate-source voltage | 20 V, 20 V |
Qg - gate charge | 32 nC, 32 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Dual |
Qualifications | AEC-Q101 |
Channel mode | Enhancement |
Fall time | 24 ns, 24 ns |
Forward transconductance - minimum | 29 S, 29 S |
Pd - Power Dissipation | 48 W |
Rise Time | 3 ns, 3 ns |
Series | SQ |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 23 ns, 23 ns |
Typical turn-on delay time | 10 ns, 10 ns |
Unit weight | 506.600 mg |
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