TEMT1000
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | SMD-2 |
Installation style | SMD/SMT |
Peak wavelength | 950 nm |
Operating supply voltage | 5 V |
Open the state of the maximum collector current | 100 mA |
Collector - Emitter maximum voltage VCEO | 70 V |
Dark current | 200 nA |
Rise Time | 2 us |
Fall time | 2.3 us |
Pd - Power Dissipation | 100 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 85 C |
Series | TEMT |
Collector - emitter breakdown voltage | 70 V |
Collector - emitter saturation voltage | 0.3 V |
Half strength angle | 15 deg |
Height | 2.7 mm |
Length | 2.5 mm |
Lens color / type | Black |
Weak current | 7 mA |
Factory packing quantity | 1000 |
Types | IR Chip |
Wavelength | 880 nm |
Width | 2 mm |
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